Ion Implant Research and Review - Documents and Articles of Interest:
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Glossary of Commonly Used Ion Implantation Terms
- A handy list of ion implant terms and explanations
High Dose Hydrogen Implant Blistering Effects as a Function of Selected Implanter and Substrate Conditions
- Buried dielectrics using high dose Hydrogen with subsequent wafer splitting and bonding (Smart-Cut™ for example) is a well-known process [1]. The ion implantation portion of this popular process in silicon is a key step and it is not fully characterized in silicon as to dose rate...
Ion Implanter Cross Contamination and Maintenance Safety Considerations With High Dose Phosphorus
- The contamination on previously implanted Phosphorus into other species, known as “implant memory” has been previously reported with emphasis on diffusivity of the P in As (or Sb) [1,2,3]. This study continues some of the investigations done earlier but with some additional focus on some safety considerations...
Review of the Cormap Optical Dosimetry System
- A review of the performance of an extended performance optical metrology system for ion beam dosimetry system with an energy range from 0.25eV to over 6MeV and a dose range of high E10 to E17 is presented. The dose sensitivity of the instrument over a dose range (E13 – High E16) averages > 0.7 and as high as 1.0+. An optical reflectivity model is presented describing the measurement technique and its response due to ion implant.
Planar Channeling Effects in Batch Process Ion Implanter
- In batch process implantation systems, the presence of platen rotation and the possible use of domed platens produce averaging effects which complicate the desing of implant geometries to minimize channeling. Data is presented for both flat and domed platens with different wafer orientation (twist) angles...
RTP Shallow Junction Formation of a Low Energy Boron Implant
- The formation of shallow junctions by rapid thermal processing (RTP) of 10 and 20 keV boron implants into both single crystal and preamorphized silicon wafers is investigated. Dopant activation and junction depths are studed over a wide range of anneal tempteratures and times in preamorphized silicon...
Advances in Cross Contamination Control with Ion Implantation
- The Varian VIISta 80 is a single-wafer high-current implanter, which uses a ribbon beam and a single-direction mechanical scan for implantation. The placement of the wafers on an electrostatic platen, and the absence of end station parts in the vicinity of the wafer during implant, translate into an expected advantage in implanter memory over batch tools...
The Significance of Controlling Off-Axis (from 1-0-0) Oriented Si Wafers During High Tilt Implants
- Various "off-axis" (from 1-0-0) angle oriented (biased) silicon wafers were implanted at high tilt angles (up to 60°) to investigat the effects on junction depth and sheet resistance repeatability. "Off-axis" orientations of 0.0°, 0.35°, 1.0°, 4.0°, and 7.0° were implanted with As+, B+ or F+ at a does of 5e13 ions/cm2 with an energy of 40keV, 9keV or 23keV respectively...
Selected Ion Range Tables
Aluminum in Silicon
Antimony in Silicon
Arsenic in Silicon
Arsenic in Silicon-ULE
Beryllium in GaAs
Beryllium in InP
Beryllium in Silicon
Boron in GaAS
Boron in Silicon-ULE
Boron in Silicon
Fluorine in Silicon
Helium in Silicon
Helium in ZnSe
Hydrogen in Germanium
Hydrogen in Silicon
Hydrogen in SiO2
Hydrogen in ZnSe
Indium in Silicon
Phosphorus in GaAs
Phosphorus in Silicon
Silicon in GaAs